New projects foster Lingang development

More than 20 projects are launched in the new area  to develop integrated circuits, artificial intelligence, bio-medicine, civil aviation, new energy vehicles and other industries.

More than 20 projects with a total investment of 11 billion yuan (US$1.55 billion) were launched in the Lingang New Area on Thursday.

The projects mainly focus on consolidating the area, which is part of the China (Shanghai) Pilot Free Trade Zone, as a future-oriented intelligent manufacturing hub, a high-end international services cluster and a major source of science and technology innovation.

They cover the development of integrated circuits, artificial intelligence, bio-medicine, civil aviation, new energy vehicles and other high-tech industries.

Since the launch of the new area late last month, the agglomeration of high-end industrial projects and enterprise headquarters has accelerated, according to Zhu Zhisong, executive deputy director of the Lingang Special Area Administrative Committee.

The committee and its business arms are approaching nearly 200 projects. Through preliminary negotiations, deals are expected to be reached over more than 70 projects, involving nearly 100 billion yuan in investment, Zhu said.

Construction of the Enn Group’s micro gas turbine project, the high-end manufacturing industrial park and the industrial park of new energy auto parts kicked off on Thursday.

With an investment of 450 million yuan, the gas turbine project covers 2 hectares in Lingang’s heavy equipment industrial zone.

It took Enn Energy Power Technology (Shanghai) Co just five days to obtain the necessary permits after winning the bid for the land on August 29.

The project will develop micro and small gas turbines and serve the development and industrialization of 100 KW, 300 KW micro gas turbines in the future.

A senior executive with the company said that inspired by the benefits of efficient government services in the new area, it will take the advantage of the high-end manufacturing agglomeration and move its major business to the new area.

The high-end manufacturing industrial park and the industrial park of new energy auto parts are both in the Fengxian area of the Lingang New Area.

The parks have apartments for workers and other support facilities, such as canteens, shops, banks and medical services.

The high-end manufacturing industrial park is adjacent to the Fengxian park of Lingang. It reaches Zhengshun Road in the east, Pingda Road in the south, to the north of Youyi River and to the west of Dale Port.

The park will cover 65,000 square meters, with a total investment of about 460 million yuan. With a total floor area of 79,000 square meters, it will be built in 2021.

The 55,000-square-meter industrial park of new energy auto parts is next to the phase one of the Tesla Shanghai Gigafactory. It will border Zhengjia Road in the east, Jiangshan Road in the south and reach Pingda Road in the north.

It involves around 300 million yuan of investment and will be built by the end of 2020.

Among other projects, the Innovation Academy for Microsatellites of Chinese Academy of Sciences will carry out its second phase construction in the comprehensive zone of Lingang by the end of the year.

The third phase or the R&D of commercial satellites will be implemented in Lingang, according to Zhou Sigen, deputy Party secretary of the academy.

“It is anticipated that in the next 10 years, we will develop hundreds of satellites in the Lingang new area, involving major national space projects, frontier scientific tasks and the development of space industrialization,” Zhou said.

With Lingang expected to become a high ground for the R&D of integrated circuits, semiconductor manufacturer GLC Semiconductor Co plans to invest 5 billion yuan in building an R&D center and a manufacturing base for the third generation compound semiconductor GaN technology.

The GLC team has mastered the core technologies and key experiences of GaN semiconductor fabrication process, and has a number of core technology patents, which can lead the rapid development of GaN semiconductors.

GLC is leading the development and production of GaN-on-Si, GaN -on-SiC epitaxial wafers, and related chip design.

The GaN high-power semiconductor, high RF semi-conductor it developed play key roles in power control systems and communications for high-speed rail, electric vehicles, 5G communications, radar, robotics and other industries, according to Liu Jian, chairman of GLC Semiconductor (Shanghai) Co.

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